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PSMN4R0-40YS,115

NEXPERIA - PSMN4R0-40YS,115 - MOSFET, N CHANNEL, 40V, 100A, 4-SOT-669


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN4R0-40YS,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 507
  • Description: NEXPERIA - PSMN4R0-40YS,115 - MOSFET, N CHANNEL, 40V, 100A, 4-SOT-669 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Digi-Reel®
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 5.6MOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 106W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 106W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 20V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 19ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 77 mJ
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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