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PSMN4R1-30YLC,115

PSMN4R1-30YLC,115 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN4R1-30YLC,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 982
  • Description: PSMN4R1-30YLC,115 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 67W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 64W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.35m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1502pF @ 15V
Current - Continuous Drain (Id) @ 25°C 92A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 19ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 92A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain Current-Max (Abs) (ID) 90A
Drain-source On Resistance-Max 0.0057Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 360A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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