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PSMN4R2-30MLDX

MOSFET N-CH 30V 70A LFPAK33


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN4R2-30MLDX
  • Package: SOT-1210, 8-LFPAK33
  • Datasheet: PDF
  • Stock: 220
  • Description: MOSFET N-CH 30V 70A LFPAK33 (Kg)

Details

Tags

Parameters
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 8
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 65W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.3m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1795pF @ 15V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 29.3nC @ 10V
Rise Time 18.5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.7 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 2.2V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0057Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 366A
Avalanche Energy Rating (Eas) 59 mJ
FET Feature Schottky Diode (Body)
See Relate Datesheet

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