Parameters | |
---|---|
Current - Continuous Drain (Id) @ 25°C | 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 41.5nC @ 10V |
Rise Time | 58ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 21 ns |
Turn-Off Delay Time | 44 ns |
Continuous Drain Current (ID) | 100A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 30V |
Drain-source On Resistance-Max | 0.0062Ohm |
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 465A |
Avalanche Energy Rating (Eas) | 74 mJ |
Height | 6.35mm |
Length | 31.75mm |
Width | 6.35mm |
Radiation Hardening | No |
Factory Lead Time | 1 Week |
RoHS Status | ROHS3 Compliant |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Lead Free | Lead Free |
Surface Mount | NO |
Number of Pins | 3 |
Weight | 453.59237mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2009 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 103W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 103W |
Case Connection | DRAIN |
Turn On Delay Time | 28 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 4.3m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.15V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 12V |