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PSMN4R3-30PL,127

NEXPERIA - PSMN4R3-30PL,127 - MOSFET, N CHANNEL, 30V, 100A, 3-TO-220AB


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN4R3-30PL,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 263
  • Description: NEXPERIA - PSMN4R3-30PL,127 - MOSFET, N CHANNEL, 30V, 100A, 3-TO-220AB (Kg)

Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 41.5nC @ 10V
Rise Time 58ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0062Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 465A
Avalanche Energy Rating (Eas) 74 mJ
Height 6.35mm
Length 31.75mm
Width 6.35mm
Radiation Hardening No
Factory Lead Time 1 Week
RoHS Status ROHS3 Compliant
Mounting Type Through Hole
Package / Case TO-220-3
Lead Free Lead Free
Surface Mount NO
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 103W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 103W
Case Connection DRAIN
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 12V
See Relate Datesheet

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