Parameters | |
---|---|
Turn On Delay Time | 34.7 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 4.1m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 8400pF @ 40V |
Current - Continuous Drain (Id) @ 25°C | 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 125nC @ 10V |
Rise Time | 38.1ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 18.4 ns |
Turn-Off Delay Time | 66 ns |
Continuous Drain Current (ID) | 100A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 80V |
Drain to Source Breakdown Voltage | 80V |
Height | 6.35mm |
Length | 44.45mm |
Width | 6.35mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Surface Mount | NO |
Number of Pins | 3 |
Weight | 453.59237mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2009 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Voltage | 80V |
Power Dissipation-Max | 306W Tc |
Current | 100A |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 306W |
Case Connection | DRAIN |