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PSMN4R4-80PS,127

MOSFET N-CH 80V 100A TO220AB


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN4R4-80PS,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 272
  • Description: MOSFET N-CH 80V 100A TO220AB (Kg)

Details

Tags

Parameters
Turn On Delay Time 34.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.1m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 40V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Rise Time 38.1ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 18.4 ns
Turn-Off Delay Time 66 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain to Source Breakdown Voltage 80V
Height 6.35mm
Length 44.45mm
Width 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Voltage 80V
Power Dissipation-Max 306W Tc
Current 100A
Operating Mode ENHANCEMENT MODE
Power Dissipation 306W
Case Connection DRAIN
See Relate Datesheet

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