Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SC-100, SOT-669 |
Number of Pins | 5 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Terminal Finish | Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 61W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 61W |
Case Connection | DRAIN |
Turn On Delay Time | 17.2 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 4.8m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 1.95V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 1324pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 84A Tc |
Gate Charge (Qg) (Max) @ Vgs | 20.5nC @ 10V |
Rise Time | 18.7ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 8.75 ns |
Turn-Off Delay Time | 24.3 ns |
Continuous Drain Current (ID) | 84A |
Threshold Voltage | 1.54V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 336A |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |