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PSMN4R8-100BSEJ

MOSFET N-channel 100 V 4.8 mo FET


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN4R8-100BSEJ
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 390
  • Description: MOSFET N-channel 100 V 4.8 mo FET (Kg)

Details

Tags

Parameters
Rise Time 65ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 69 ns
Turn-Off Delay Time 127 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain Current-Max (Abs) (ID) 707A
Drain-source On Resistance-Max 0.0048Ohm
Pulsed Drain Current-Max (IDM) 707A
Avalanche Energy Rating (Eas) 542 mJ
Turn Off Time-Max (toff) 294ns
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Material Brass, Bronze
Weight 3.949996g
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination Wire Wrap
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Plating Gold, Lead, Tin
Power Dissipation-Max 405W Tc
Element Configuration Single
Wire Gauge (Max) 24 AWG
Wire Gauge (Min) 20 AWG
Operating Mode ENHANCEMENT MODE
Power Dissipation 405W
Wire/Cable Gauge 18 AWG
Case Connection DRAIN
Turn On Delay Time 41 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tj
Gate Charge (Qg) (Max) @ Vgs 278nC @ 10V
See Relate Datesheet

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