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PSMN5R0-100ES,127

MOSFET N-CH 100V 120A I2PAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN5R0-100ES,127
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 260
  • Description: MOSFET N-CH 100V 120A I2PAK (Kg)

Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 91ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 63 ns
Turn-Off Delay Time 122 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.005Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 680A
Factory Lead Time 1 Week
Radiation Hardening No
Mounting Type Through Hole
RoHS Status ROHS3 Compliant
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Lead Free Lead Free
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 338W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 338W
Case Connection DRAIN
Turn On Delay Time 45 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
See Relate Datesheet

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