Parameters | |
---|---|
Input Capacitance (Ciss) (Max) @ Vds | 9900pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 120A Tc |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
Rise Time | 91ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 63 ns |
Turn-Off Delay Time | 122 ns |
Continuous Drain Current (ID) | 120A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 100V |
Drain-source On Resistance-Max | 0.005Ohm |
Drain to Source Breakdown Voltage | 100V |
Pulsed Drain Current-Max (IDM) | 680A |
Factory Lead Time | 1 Week |
Radiation Hardening | No |
Mounting Type | Through Hole |
RoHS Status | ROHS3 Compliant |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Lead Free | Lead Free |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2011 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 338W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 338W |
Case Connection | DRAIN |
Turn On Delay Time | 45 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5m Ω @ 25A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |