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PSMN5R0-30YL,115

NEXPERIA - PSMN5R0-30YL,115 - MOSFET Transistor, N Channel, 84 A, 30 V, 3.63 mohm, 10 V, 1.7 V RoHS Compliant: Yes


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN5R0-30YL,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 749
  • Description: NEXPERIA - PSMN5R0-30YL,115 - MOSFET Transistor, N Channel, 84 A, 30 V, 3.63 mohm, 10 V, 1.7 V RoHS Compliant: Yes (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 61W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1760pF @ 12V
Current - Continuous Drain (Id) @ 25°C 91A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 91A
JEDEC-95 Code MO-235
Drain-source On Resistance-Max 0.008Ohm
Pulsed Drain Current-Max (IDM) 336A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 32 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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