PSMN5R6-100BS,118
| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 306W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 306W |
| Case Connection | DRAIN |
| Turn On Delay Time | 31 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.6m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 8061pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 141nC @ 10V |
| Rise Time | 46ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Factory Lead Time | 1 Week |
| Vgs (Max) | ±20V |
| Mounting Type | Surface Mount |
| Fall Time (Typ) | 34 ns |
| Turn-Off Delay Time | 83 ns |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Continuous Drain Current (ID) | 100A |
| Surface Mount | YES |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 100V |
| Number of Pins | 3 |
| Drain-source On Resistance-Max | 0.0056Ohm |
| Transistor Element Material | SILICON |
| Drain to Source Breakdown Voltage | 100V |
| Operating Temperature | -55°C~175°C TJ |
| Avalanche Energy Rating (Eas) | 468 mJ |
| Packaging | Tape & Reel (TR) |
| Radiation Hardening | No |
| Published | 2012 |
| JESD-609 Code | e3 |
| RoHS Status | ROHS3 Compliant |
| Part Status | Active |
See Relate Datesheet
