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PSMN5R6-100PS,127

PSMN5R6-100PS,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN5R6-100PS,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 354
  • Description: PSMN5R6-100PS,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi (Kg)

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Parameters
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 306W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 306W
Case Connection DRAIN
Turn On Delay Time 31 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 8061pF @ 50V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V
Rise Time 46ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 34 ns
Turn-Off Delay Time 83 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.0056Ohm
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 468 mJ
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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