PSMN6R0-25YLB,115
| Parameters | |
|---|---|
| Number of Terminations | 4 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 58W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 58W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.1m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 1.95V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1099pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 73A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 19.3nC @ 10V |
| Rise Time | 17ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 73A |
| JEDEC-95 Code | MO-235 |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 25V |
| Drain-source On Resistance-Max | 0.0079Ohm |
| Drain to Source Breakdown Voltage | 25V |
| Pulsed Drain Current-Max (IDM) | 292A |
| Avalanche Energy Rating (Eas) | 15 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | SC-100, SOT-669 |
| Surface Mount | YES |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
See Relate Datesheet
