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PSMN6R1-25MLDX

PSMN6R1-25MLD/MLFPAK/REEL 7 Q


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN6R1-25MLDX
  • Package: SOT-1210, 8-LFPAK33
  • Datasheet: PDF
  • Stock: 797
  • Description: PSMN6R1-25MLD/MLFPAK/REEL 7 Q (Kg)

Details

Tags

Parameters
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 60A
Drain-source On Resistance-Max 0.0103Ohm
Pulsed Drain Current-Max (IDM) 235A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 51.3 mJ
FET Feature Schottky Diode (Body)
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 8
Reference Standard IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 42W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.24m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 702pF @ 12V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 10.7nC @ 10V
See Relate Datesheet

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