PSMN6R1-25MLDX
| Parameters | |
|---|---|
| Drain to Source Voltage (Vdss) | 25V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 60A |
| Drain-source On Resistance-Max | 0.0103Ohm |
| Pulsed Drain Current-Max (IDM) | 235A |
| DS Breakdown Voltage-Min | 25V |
| Avalanche Energy Rating (Eas) | 51.3 mJ |
| FET Feature | Schottky Diode (Body) |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-1210, 8-LFPAK33 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Additional Feature | HIGH RELIABILITY |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Pin Count | 8 |
| Reference Standard | IEC-60134 |
| JESD-30 Code | R-PSSO-G4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 42W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7.24m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 702pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 60A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 10.7nC @ 10V |
See Relate Datesheet
