Parameters | |
---|---|
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 405W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 405W |
Case Connection | DRAIN |
Turn On Delay Time | 42.1 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 6.7m Ω @ 25A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 11384pF @ 60V |
Current - Continuous Drain (Id) @ 25°C | 70A Tc |
Gate Charge (Qg) (Max) @ Vgs | 207.1nC @ 10V |
Rise Time | 58.2ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 67.7 ns |
Turn-Off Delay Time | 142.1 ns |
Continuous Drain Current (ID) | 70A |
Threshold Voltage | 3V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 120V |
Drain-source On Resistance-Max | 0.0067Ohm |
Drain to Source Breakdown Voltage | 120V |
Pulsed Drain Current-Max (IDM) | 280A |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2013 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
Number of Elements | 1 |