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PSMN7R0-100ES,127

PSMN7R0-100ES - N-channel 100V 6.8 m? standard level MOSFET in I2PAK.


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN7R0-100ES,127
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 907
  • Description: PSMN7R0-100ES - N-channel 100V 6.8 m? standard level MOSFET in I2PAK. (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Pin Count 3
Power Dissipation-Max 269W Tc
Element Configuration Single
Power Dissipation 269W
Turn On Delay Time 34.6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6686pF @ 50V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Rise Time 45.6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 49.5 ns
Turn-Off Delay Time 103.9 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 90V
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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