banner_page

PSMN7R0-100PS,127

MOSFET N-CH 100V 100A TO220AB


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN7R0-100PS,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 718
  • Description: MOSFET N-CH 100V 100A TO220AB (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Packaging Tube
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 269W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 269W
Case Connection DRAIN
Turn On Delay Time 34.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6686pF @ 50V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Rise Time 45.6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 49.5 ns
Turn-Off Delay Time 103.9 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.0068Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 475A
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good