PSMN7R8-100PSEQ
| Parameters | |
|---|---|
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 294W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7.8m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 7110pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tj |
| Gate Charge (Qg) (Max) @ Vgs | 128nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 100A |
| JEDEC-95 Code | TO-220AB |
| Drain-source On Resistance-Max | 0.0078Ohm |
| Pulsed Drain Current-Max (IDM) | 473A |
| DS Breakdown Voltage-Min | 100V |
| Avalanche Energy Rating (Eas) | 315 mJ |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2014 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| Reference Standard | IEC-60134 |
See Relate Datesheet
