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PSMN8R5-60YS,115

MOSFET N-CHANNEL 60V STD LEVEL MOSFET


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PSMN8R5-60YS,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 322
  • Description: MOSFET N-CHANNEL 60V STD LEVEL MOSFET (Kg)

Details

Tags

Parameters
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 106W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 106W
Case Connection DRAIN
Turn On Delay Time 18.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2370pF @ 30V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time 13.7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.2 ns
Turn-Off Delay Time 32.4 ns
Continuous Drain Current (ID) 76A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.008Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 303A
Avalanche Energy Rating (Eas) 97 mJ
See Relate Datesheet

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