Parameters | |
---|---|
Power Dissipation | 170W |
Case Connection | DRAIN |
Turn On Delay Time | 21 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8.7m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 3346pF @ 40V |
Current - Continuous Drain (Id) @ 25°C | 90A Tc |
Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
Rise Time | 26ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 20 ns |
Turn-Off Delay Time | 46 ns |
Continuous Drain Current (ID) | 90A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 80V |
Drain-source On Resistance-Max | 0.0087Ohm |
Drain to Source Breakdown Voltage | 73V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 170W Tc |
Operating Mode | ENHANCEMENT MODE |