Parameters | |
---|---|
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 6.1 ns |
Turn-Off Delay Time | 11.1 ns |
Continuous Drain Current (ID) | 55A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 25V |
Drain to Source Breakdown Voltage | 25V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | SOT-1210, 8-LFPAK33 |
Surface Mount | YES |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Pin Count | 8 |
JESD-30 Code | R-PSSO-G4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 45W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 45W |
Case Connection | DRAIN |
Turn On Delay Time | 7.1 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8.65m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 1.95V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 705pF @ 12.5V |
Current - Continuous Drain (Id) @ 25°C | 55A Tc |
Gate Charge (Qg) (Max) @ Vgs | 11.7nC @ 10V |
Rise Time | 10.1ns |