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PTAB182002TCV2R250XTMA1

IC RF FET LDMOS 190W H-49248H-4


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-PTAB182002TCV2R250XTMA1
  • Package: H-49248H-4
  • Datasheet: PDF
  • Stock: 138
  • Description: IC RF FET LDMOS 190W H-49248H-4 (Kg)

Details

Tags

Parameters
Package / Case H-49248H-4
Packaging Tape & Reel (TR)
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated 65V
Current Rating (Amps) 10μA
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 1.805GHz~1.88GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature (Max) 200°C
Operating Supply Voltage 28V
Current - Test 520mA
Halogen Free Halogen Free
Transistor Type LDMOS
Gain 14.8dB
Power - Output 29W
RoHS Status Non-RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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