Parameters | |
---|---|
Terminal Finish | Tin/Lead (Sn/Pb) |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 2 |
JESD-30 Code | R-CDFM-F2 |
Qualification Status | Not Qualified |
Operating Temperature (Max) | 200°C |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | ENHANCEMENT MODE |
Case Connection | SOURCE |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | N-CHANNEL |
DS Breakdown Voltage-Min | 65V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Power Dissipation-Max (Abs) | 237W |
Highest Frequency Band | L B |
RoHS Status | Non-RoHS Compliant |
Surface Mount | YES |
Transistor Element Material | SILICON |
JESD-609 Code | e0 |
Number of Terminations | 2 |
ECCN Code | EAR99 |