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PTF180101S V1

FET RF 65V 1.99GHZ H-32259-2


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-PTF180101S V1
  • Package: H32259-2
  • Datasheet: PDF
  • Stock: 289
  • Description: FET RF 65V 1.99GHZ H-32259-2 (Kg)

Details

Tags

Parameters
Package / Case H32259-2
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2004
Series GOLDMOS®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated 65V
Additional Feature HIGH RELIABILITY
Current Rating (Amps) 1μA
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Frequency 1.99GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-XDSO-G2
Operating Temperature (Max) 200°C
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 180mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 19dB
DS Breakdown Voltage-Min 65V
Power - Output 10W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status RoHS Compliant
See Relate Datesheet

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