Parameters | |
---|---|
Frequency | 2.68GHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | S-CDSO-G2 |
Operating Temperature (Max) | 200°C |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | ENHANCEMENT MODE |
Case Connection | SOURCE |
Current - Test | 180mA |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | LDMOS |
Gain | 16dB |
DS Breakdown Voltage-Min | 65V |
Power - Output | 10W |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Voltage - Test | 28V |
RoHS Status | RoHS Compliant |
Package / Case | H32259-2 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 2007 |
Series | GOLDMOS® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 2 |
Voltage - Rated | 65V |
Additional Feature | HIGH RELIABILITY |
Current Rating (Amps) | 1μA |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | compliant |