Parameters | |
---|---|
Transistor Application | AMPLIFIER |
Polarity/Channel Type | N-CHANNEL |
DS Breakdown Voltage-Min | 65V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Highest Frequency Band | ULTRA HIGH FREQUENCY B |
RoHS Status | RoHS Compliant |
Surface Mount | YES |
Transistor Element Material | SILICON |
Published | 2010 |
Part Status | Active |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-CDFP-F2 |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | ENHANCEMENT MODE |
Case Connection | SOURCE |