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PTFA043002E V1

IC FET RF LDMOS 300W H-30275-4


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-PTFA043002E V1
  • Package: 2-Flatpack, Fin Leads
  • Datasheet: PDF
  • Stock: 677
  • Description: IC FET RF LDMOS 300W H-30275-4 (Kg)

Details

Tags

Parameters
Current Rating (Amps) 10μA
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Frequency 800MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-CDFM-F4
Operating Temperature (Max) 200°C
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 1.55A
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 16dB
DS Breakdown Voltage-Min 65V
Power - Output 100W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 32V
RoHS Status RoHS Compliant
Package / Case 2-Flatpack, Fin Leads
Surface Mount YES
Transistor Element Material SILICON
Packaging Tray
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
Voltage - Rated 65V
Additional Feature HIGH RELIABILITY
See Relate Datesheet

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