Parameters | |
---|---|
Number of Terminations | 2 |
ECCN Code | EAR99 |
Voltage - Rated | 65V |
Current Rating (Amps) | 10μA |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Frequency | 2.11GHz~2.17GHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-CDFM-F2 |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | ENHANCEMENT MODE |
Case Connection | SOURCE |
Current - Test | 1.6A |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | LDMOS |
Gain | 15.8dB |
DS Breakdown Voltage-Min | 65V |
Power - Output | 200W |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Voltage - Test | 30V |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Package / Case | 2-Flatpack, Fin Leads, Flanged |
Surface Mount | YES |
Transistor Element Material | SILICON |
Packaging | Strip |
Published | 2009 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |