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PTFA261702E V1

IC FET RF LDMOS 170W H-30275-4


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-PTFA261702E V1
  • Package: 2-Flatpack, Fin Leads
  • Datasheet: PDF
  • Stock: 325
  • Description: IC FET RF LDMOS 170W H-30275-4 (Kg)

Details

Tags

Parameters
Package / Case 2-Flatpack, Fin Leads
Packaging Tray
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Voltage - Rated 65V
Subcategory FET General Purpose Power
Current Rating (Amps) 10μA
Reach Compliance Code compliant
Frequency 2.66GHz
Operating Temperature (Max) 200°C
Configuration Single
Operating Mode ENHANCEMENT MODE
Current - Test 1.8A
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 15dB
Power - Output 170W
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 643W
Voltage - Test 28V
RoHS Status RoHS Compliant
See Relate Datesheet

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