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PTFB191501EV1R250XTMA1

FET RF LDMOS 150W H36248-2


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-PTFB191501EV1R250XTMA1
  • Package: 2-Flatpack, Fin Leads
  • Datasheet: PDF
  • Stock: 594
  • Description: FET RF LDMOS 150W H36248-2 (Kg)

Details

Tags

Parameters
Current - Test 1.2A
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 18dB
DS Breakdown Voltage-Min 65V
Power - Output 150W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 30V
Package / Case 2-Flatpack, Fin Leads
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Voltage - Rated 65V
Additional Feature HGH RELIABILITY
Terminal Position DUAL
Reach Compliance Code compliant
Frequency 1.99GHz
Base Part Number PTFB191501
JESD-30 Code R-XDFM-F2
Operating Temperature (Max) 200°C
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
See Relate Datesheet

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