Parameters | |
---|---|
Current - Test | 1.2A |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | LDMOS |
Gain | 18dB |
DS Breakdown Voltage-Min | 65V |
Power - Output | 150W |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Voltage - Test | 30V |
Package / Case | 2-Flatpack, Fin Leads |
Surface Mount | YES |
Transistor Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Voltage - Rated | 65V |
Additional Feature | HGH RELIABILITY |
Terminal Position | DUAL |
Reach Compliance Code | compliant |
Frequency | 1.99GHz |
Base Part Number | PTFB191501 |
JESD-30 Code | R-XDFM-F2 |
Operating Temperature (Max) | 200°C |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | ENHANCEMENT MODE |
Case Connection | SOURCE |