Parameters | |
---|---|
Package / Case | H-34275G-6/2 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Packaging | Tray |
Published | 2015 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Voltage - Rated | 65V |
Terminal Position | QUAD |
Terminal Form | UNSPECIFIED |
Reach Compliance Code | unknown |
Frequency | 1.99GHz |
JESD-30 Code | R-CQSO-X6 |
Operating Temperature (Max) | 200°C |
Operating Supply Voltage | 30V |
Number of Elements | 2 |
Configuration | COMMON SOURCE, 2 ELEMENTS |
Operating Mode | ENHANCEMENT MODE |
Current - Test | 2.65A |
Transistor Application | AMPLIFIER |
Halogen Free | Halogen Free |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | LDMOS (Dual), Common Source |
Gain | 19dB |
DS Breakdown Voltage-Min | 65V |
Power - Output | 80W |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |