Parameters | |
---|---|
Surface Mount | YES |
Transistor Element Material | SILICON |
Published | 2017 |
Part Status | Active |
Number of Terminations | 10 |
ECCN Code | EAR99 |
Terminal Position | DUAL |
Terminal Form | NO LEAD |
JESD-30 Code | S-PDSO-N10 |
Operating Temperature (Max) | 225°C |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | ENHANCEMENT MODE |
Case Connection | SOURCE |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | N-CHANNEL |
DS Breakdown Voltage-Min | 105V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Highest Frequency Band | ULTRA HIGH FREQUENCY B |
Power Gain-Min (Gp) | 20.5dB |
RoHS Status | Non-RoHS Compliant |