PUMD6,115
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | BUILT IN BIAS RESISTOR |
| HTS Code | 8541.21.00.95 |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | P*MD6 |
| Pin Count | 6 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 2 |
| Polarity | NPN, PNP |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Power - Max | 300mW |
| Transistor Application | SWITCHING |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA 5V |
| Current - Collector Cutoff (Max) | 1μA |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250μA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Resistor - Base (R1) | 4.7k Ω |
| VCEsat-Max | 0.3 V |
| Collector-Base Capacitance-Max | 3.5pF |
| Power Dissipation Ambient-Max | 0.4W |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
