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PZTA29

PZTA29 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-PZTA29
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 116
  • Description: PZTA29 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Current Rating 800mA
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number PZTA29
JESD-30 Code R-PDSO-G4
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 100V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage 1.2V
Max Breakdown Voltage 100V
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 12V
hFE Min 10000
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 188mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
See Relate Datesheet

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