Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 3 |
Weight | 188mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | -80V |
Max Power Dissipation | 1W |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | -500mA |
Frequency | 50MHz |
Base Part Number | PZTA56 |
JESD-30 Code | R-PDSO-G4 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1W |
Case Connection | COLLECTOR |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 50MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 80V |
Max Collector Current | 500mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 1V |
Current - Collector Cutoff (Max) | 100nA |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 10mA, 100mA |
Collector Emitter Breakdown Voltage | 80V |
Transition Frequency | 50MHz |
Collector Emitter Saturation Voltage | -200mV |
Max Breakdown Voltage | 80V |
Collector Base Voltage (VCBO) | -80V |
Emitter Base Voltage (VEBO) | -4V |
hFE Min | 100 |
Height | 1.7mm |
Length | 6.7mm |
Width | 3.7mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |