QH08TZ600
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Diode Element Material | SILICON |
| Packaging | Tube |
| Published | 2011 |
| Series | Qspeed™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.80 |
| Technology | SCHOTTKY |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 250μA @ 600V |
| Power Dissipation | 44.6W |
| Voltage - Forward (Vf) (Max) @ If | 3.15V @ 8A |
| Case Connection | ISOLATED |
| Forward Current | 8A |
| Operating Temperature - Junction | 150°C Max |
| Max Surge Current | 80A |
| Output Current-Max | 8A |
| Application | EFFICIENCY |
| Max Reverse Voltage (DC) | 600V |
| Average Rectified Current | 8A |
| Number of Phases | 1 |
| Reverse Recovery Time | 11.1 ns |
| Peak Reverse Current | 250μA |
| Max Repetitive Reverse Voltage (Vrrm) | 600V |
| JEDEC-95 Code | TO-220AC |
| Capacitance @ Vr, F | 25pF @ 10V 1MHz |
| Peak Non-Repetitive Surge Current | 80A |
| Reverse Voltage | 600V |
| Recovery Time | 11.1 ns |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
