QS5W2TR
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-5 Thin, TSOT-23-5 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2015 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.25W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 5 |
| JESD-30 Code | R-PDSO-G5 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | COMMON EMITTER, 2 ELEMENTS |
| Power - Max | 1.25W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | 2 NPN (Dual) Common Emitter |
| Collector Emitter Voltage (VCEO) | 350mV |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 50mA 3V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 50mA, 1A |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 320MHz |
| Max Breakdown Voltage | 50V |
| Frequency - Transition | 320MHz |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
