Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-3P-3 Full Pack |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2015 |
Part Status | Last Time Buy |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 68W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | ISOLATED |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 196m Ω @ 9.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 1550pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 20A Tc |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 20A |
Threshold Voltage | 5V |
Drain-source On Resistance-Max | 0.196Ohm |
Pulsed Drain Current-Max (IDM) | 60A |
DS Breakdown Voltage-Min | 600V |
Avalanche Energy Rating (Eas) | 418 mJ |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |