Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-3P-3 Full Pack |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Published | 2009 |
Pbfree Code | yes |
Part Status | Last Time Buy |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 150W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | ISOLATED |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 150m Ω @ 12.5A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 3250pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 25A Tc |
Gate Charge (Qg) (Max) @ Vgs | 88nC @ 10V |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 25A |
Drain-source On Resistance-Max | 0.15Ohm |
Pulsed Drain Current-Max (IDM) | 100A |
DS Breakdown Voltage-Min | 600V |
Avalanche Energy Rating (Eas) | 39 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |