RDD050N20TL
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper (Sn98Cu2) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 20W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 20W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 720m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 292pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 9.3nC @ 10V |
| Rise Time | 22ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 28 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 5A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain-source On Resistance-Max | 0.72Ohm |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 20A |
| Avalanche Energy Rating (Eas) | 75 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
