RFP12N10L
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | TIN LEAD |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 12A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 60W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 60W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 200m Ω @ 12A, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 12A Tc |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs (Max) | ±10V |
| Continuous Drain Current (ID) | 12A |
| JEDEC-95 Code | TO-220AB |
| Drain-source On Resistance-Max | 0.2Ohm |
| Drain to Source Breakdown Voltage | 100V |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
