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RFP50N06

RFP50N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-RFP50N06
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 464
  • Description: RFP50N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 50A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Height 9.4mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 22mOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 50A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 131W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 131W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2020pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 20V
Rise Time 55ns
Drive Voltage (Max Rds On,Min Rds On) 10V
See Relate Datesheet

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