Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Weight | 1.8g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2005 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 14mOhm |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 60V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 70A |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 150W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 150W |
Case Connection | DRAIN |
Turn On Delay Time | 10 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 14m Ω @ 70A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 70A Tc |
Gate Charge (Qg) (Max) @ Vgs | 156nC @ 20V |
Rise Time | 137ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 24 ns |
Turn-Off Delay Time | 32 ns |
Continuous Drain Current (ID) | 70A |
Threshold Voltage | 4V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 60V |
Height | 9.4mm |
Length | 10.67mm |
Width | 4.83mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |