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RGT16NS65DGTL

IGBT 650V 16A 94W TO-263S


  • Manufacturer: ROHM Semiconductor
  • Nocochips NO: 687-RGT16NS65DGTL
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: -
  • Stock: 378
  • Description: IGBT 650V 16A 94W TO-263S (Kg)

Details

Tags

Parameters
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 94W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 16A
Reverse Recovery Time 42 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.65V
Max Breakdown Voltage 650V
Turn On Time 27 ns
Test Condition 400V, 8A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 8A
Continuous Collector Current 8A
Turn Off Time-Nom (toff) 170 ns
IGBT Type Trench Field Stop
Gate Charge 21nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 13ns/33ns
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Power Dissipation 94W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
See Relate Datesheet

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