RGT30NS65DGTL
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Weight | 1.946308g |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 133W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 133W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 18 ns |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 64 ns |
| Collector Emitter Voltage (VCEO) | 650V |
| Max Collector Current | 30A |
| Reverse Recovery Time | 55 ns |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.65V |
| Max Breakdown Voltage | 650V |
| Turn On Time | 40 ns |
| Test Condition | 400V, 15A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 15A |
| Max Junction Temperature (Tj) | 175°C |
| Continuous Collector Current | 30A |
| Turn Off Time-Nom (toff) | 204 ns |
| IGBT Type | Trench Field Stop |
| Gate Charge | 32nC |
| Current - Collector Pulsed (Icm) | 45A |
| Td (on/off) @ 25°C | 18ns/64ns |
| Height | 5mm |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
