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RGT40NS65DGTL

IGBT 650V 40A 161W TO-263S


  • Manufacturer: ROHM Semiconductor
  • Nocochips NO: 687-RGT40NS65DGTL
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: -
  • Stock: 258
  • Description: IGBT 650V 40A 161W TO-263S (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.946308g
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Power Dissipation 161W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 161W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 40A
Reverse Recovery Time 58 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.65V
Max Breakdown Voltage 650V
Turn On Time 51 ns
Test Condition 400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A
Continuous Collector Current 20A
Turn Off Time-Nom (toff) 204 ns
IGBT Type Trench Field Stop
Gate Charge 40nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 22ns/75ns
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet

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