RGT8NS65DGC9
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tube |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Input Type | Standard |
| Power - Max | 65W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Reverse Recovery Time | 40ns |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 8A |
| Turn On Time | 54 ns |
| Test Condition | 400V, 4A, 50 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 4A |
| Turn Off Time-Nom (toff) | 158 ns |
| IGBT Type | Trench Field Stop |
| Gate Charge | 13.5nC |
| Current - Collector Pulsed (Icm) | 12A |
| Td (on/off) @ 25°C | 17ns/69ns |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
