RGTH00TS65DGC11
| Parameters | |
|---|---|
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 650V |
| Max Collector Current | 85A |
| Reverse Recovery Time | 54 ns |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.6V |
| Turn On Time | 102 ns |
| Test Condition | 400V, 50A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Continuous Collector Current | 50A |
| Turn Off Time-Nom (toff) | 221 ns |
| IGBT Type | Trench Field Stop |
| Gate Charge | 94nC |
| Current - Collector Pulsed (Icm) | 200A |
| Td (on/off) @ 25°C | 39ns/143ns |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 38.000013g |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tube |
| Published | 2014 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 277W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 277W |
| Transistor Application | POWER CONTROL |
See Relate Datesheet
