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RGW60TS65DGC11

650V 30A FIELD STOP TRENCH IGBT


  • Manufacturer: ROHM Semiconductor
  • Nocochips NO: 687-RGW60TS65DGC11
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 678
  • Description: 650V 30A FIELD STOP TRENCH IGBT (Kg)

Details

Tags

Parameters
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Turn Off Time-Nom (toff) 209 ns
IGBT Type Trench Field Stop
Gate Charge 84nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 37ns/114ns
Switching Energy 480μJ (on), 490μJ (off)
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 178W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 92ns
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 60A
Turn On Time 50 ns
See Relate Datesheet

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