banner_page

RJH1BF6RDPQ-80#T2

IGBT 1100V 55A 227.2W TO247


  • Manufacturer: Renesas Electronics America
  • Nocochips NO: 668-RJH1BF6RDPQ-80#T2
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 419
  • Description: IGBT 1100V 55A 227.2W TO247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature 150°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 227.2W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Power - Max 227.2W
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 55A
Collector Emitter Breakdown Voltage 1.1kV
Voltage - Collector Emitter Breakdown (Max) 1100V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 55A
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good