banner_page

RJH1CF4RDPQ-80#T2

SILICON N CHANNEL IGBTHIGH SPEED POWER SWITCHING


  • Manufacturer: Renesas Electronics America
  • Nocochips NO: 668-RJH1CF4RDPQ-80#T2
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 839
  • Description: SILICON N CHANNEL IGBTHIGH SPEED POWER SWITCHING (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature 150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 156.2W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Power - Max 156.2W
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 40A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good